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This paper presents the design and simulation of a novel fixed-tuned 310-350-GHz wide-band sub-harmonic mixer. The mixer is based on an anti-parallel pair of GaAs Schottky diodes fabricated at European company. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. A best double-sideband-mixer loss of 5.7 dB was achieved with 5 mW of LO power...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to...
InP and GaAs based nanowires were grown epitaxially on InP or GaAs (111)B substrates by metalorganic chemical vapor deposition via vapor-liquid-solid (VLS) mechanism. In this report, I will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for InP and GaAs nanowires on the crystal quality have been studied in detail. We demonstrated the...
Semiconductor nanowire (NW) heterostructures are increasingly important building blocks for electronic and optoelectronic devices. III-V nanowires with attention to well-controlled growth parameters, high structural quality and high optical quality NWs with unusually long recombination lifetimes can be achieved. We probe these NWs experimentally with both CW and time-resolved photoluminescence spectroscopy...
In this paper, we demonstrate the key issues of axial nanowire heterostructures, such as, the fundamental criteria for formation and failure of axial nanowire heterostructures via vapor-liquid-solid mechanism and lateral misfit strain relaxation in these structures. We show the failure of axial nanowire heterostructures by growing InAs axially on GaAs nanowires, and the lateral misfit strain relaxation...
High-efficiency GaAs single-drift IMPATT diodes have been developed up to 72 GHz using molecular-beam epitaxy. The design of the devices is based on a lower value of the electron drift velocity at high electric fields. The diodes are bonded on diamond heat sinks. The best efficiencies are 12.5% at 63 GHz with 450 mW output power and 10% at 72 GHz with 350 mW output power.
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