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Photoluminescence (PL) properties are reported for a set of m‐plane GaN films with Mg doping varied from mid 1018 cm−3 to above 1020 cm−3. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor–acceptor pair (DAP) PL bands at 2.9–3.3 eV give evidence of...
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