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Influence of direct laser writing with femtosecond pulses on electrochemical etching of n-type low conductivity (>1,000 Ωcm) silicon is demonstrated. It has been shown that thermal 1-µm-thick SiO2 layer on silicon surface can be used as a protective layer in the electrochemical etching process. It has been found that laser ablation changes not only the surface morphology and structure of silicon...
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