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In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a multilayer SiO2–HfO2 (7.5 nm)–Ag/Au nc/C60 embedded HfO2 (6 nm)–HfO2 (30 nm) gate dielectric stack. We considered three substrate materials GaN, InP and the conventional Si substrate,...
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