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A study of the physics of electronic states in cubic InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the size and density of the quantum dots. The effect of strain is also taken into account in the simulations. The photon-electron absorption coefficient is obtained for different quantum dot configurations...
In this work we have theoretically investigated photon absorption coefficient in ordered InAs/GaAs cubic quantum dot systems. We solved the Schrodinger equation associated with these structures, using a set of 13 × 13 × 13 plane waves at 12,167 equally spaced points of the Q space. We investigated the transitions between minibands arising from the conduction band, taking into account the different...
We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k.p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both...
In this work we propose a correction to the effective mass approach (EMA), to be used in Si quantum dot simulations. With this technique we obtained results comparable to those calculated by the tight-binding method (TB). We used this new approach to obtain the hole spectra in spherical quantum dots by means of a fast algorithm, thus improving the accuracy of the EMA.
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