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In this article, a scalable large‐signal model for SiGe heterojunction bipolar transistors (HBTs) is presented. Compared with SPICE Gummel‐Poon model, the proposed model has taken into account the self‐heating effects, which is important for large‐signal operations. The model includes a new base‐collector breakdown description, which has taken the current dependence into account. This model allows...
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