The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The repeatability of set/reset errors has been investigated in 40nm TaOx based ReRAM cells. Errors of the Low Resistance State (LRS) in specific cells are observed repeatedly, and such cells are recovered by DC read operation. When error cells are recovered, the LRS cell current of the recovered cells shows a sudden jump up to large cell current in certain set cycles. Then, the High Resistance State...
Error recovery effect of low resistance state (LRS) has been observed for the first time in set/reset cycling endurance in 40nm TaOx-based ReRAM cell. LRS error cells, which have an abnormally high resistance, are recovered to normal LRS by the relaxation time for error recovery between set and reset. This phenomenon can be explained by oxygen vacancy (VO) diffusion from TaOx layer to reconstruct...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.