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We developed a novel 3D stacked CMOS image sensor that not only improved the leakage characteristics by changing the applied voltage to storage nodes and reduced random noise in global shutter operation by using increased capacitors but also simultaneously captured the interval image of the rolling shutter operation between global shutter operations.
A distortion-free stacked CMOS image sensor with high density micro-bump interconnections was developed. This sensor consists of a photodiode substrate and storage node substrate and was fabricated with a wafer-on-wafer stacking technology. More than 90,000 micro-bump interconnections at a pitch of 8.6 μm per chip convey the signals. A distortion-free image was successfully obtained with the developed...
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