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We study the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with aluminum as catalyst. We show that for a growth temperature of 600°C, the silicon precursor partial pressure (SiH 4 in this study) is a key parameter for controlling the structural quality of the resulting SiNWs. We find by transmission electron microscopy that at high SiH 4 partial pressure, the...
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