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High-quality ZnO films were grown on Si(100) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1μm were grown at different growth temperatures of 350, 450 and 550°C, followed by identical high-temperature (HT) ZnO films with...
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