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During the growth of <100>‐oriented, heavily n‐type doped silicon crystals by the Czochralski method dislocation formation occurs frequently, leading to a reduction of the crystal yield. Up to now, it is not clear where and why the dislocations form. Therefore, heavily As‐doped crystals were studied in this work in more detail by means of X‐ray topography (XRT) and synchrotron X‐ray topography...
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