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Hafnium oxide films were deposited on Si(100) substrates using pulsed metal–organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350–650 °C, yielding different microstructures...
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