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A large quantity of 3C–SiC nanowires (SiCnws) with high purity were fabricated via carbothermic reduction method combined with a novel two-stage temperature program. At the first temperature stage, the reactants were kept at 1600 °C for 4 h to promote the formation of SiC nucleus and SiO intermediate gas. Then they were cooled to 1350 °C for 2 h at the second stage for the growth of SiCnws with fewer...
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