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High-power photo conductive semiconductor switches with a gap of 12 mm were fabricated from semi-insulating GaAs, in which carbon acceptor impurity was compensated by deep EL2 donor defect, resulting in very large dark resistivity. Triggered by laser pulse with different optical energy at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS at different bias voltage are underway....
Summary form only given. Super-powerful pulsed systems needs more accurate timing synchronization because more high voltage gas switches for higher pulsed power will be needed. Therefore triggering of high voltage gas switches will become a key factor affecting performance of pulsed systems. This paper reports on an experimental study of developing a photoconductive semiconductor switches (PCSS) to...
Photoconductive semiconductor switches (PCSSs) are considered as promising device s for high power applications. Since picosecond optoelectronic switching in silicon was published in 1975, especially from 1977, in which Si was replaced by GaAs, PCSSs have been significantly used in pulsed power technology, such as high-power ultra wideband microwave source and compact pulsed power generator. Since...
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