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High-power photo conductive semiconductor switches with a gap of 12 mm were fabricated from semi-insulating GaAs, in which carbon acceptor impurity was compensated by deep EL2 donor defect, resulting in very large dark resistivity. Triggered by laser pulse with different optical energy at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS at different bias voltage are underway....
In order to generate ultra-fast electrical pulses with GaAs photoconductive semiconductor switch, a novel facility will be designed and fabricated, and picosecond laser pulse will be used to trigger the PCSS. The bias voltage will be limited and the PCSS will operate in linear mode. The FWHM and rise time of the photocurrent usually are larger than that of laser pulse, and loop inductance is one of...
Photoconductive semiconductor switches (PCSSs) are considered as promising device s for high power applications. Since picosecond optoelectronic switching in silicon was published in 1975, especially from 1977, in which Si was replaced by GaAs, PCSSs have been significantly used in pulsed power technology, such as high-power ultra wideband microwave source and compact pulsed power generator. Since...
In order to generate ultrafast electrical pulse by using photoconductive semiconductor switch (PCSS), a switch with a gap of 14 mm was fabricated from semi-insulating GaAs. Illuminated by laser pulse at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS were performed at different bias voltages. Preliminary experimental results suggest that the rise time of the current through the...
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