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The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated for its unique advantages such as excellent repeatability, conformity, and thickness control at the atomic level. ALD precursor chemistry has mainly been based on homoleptic compounds such as, but not limited to, metal halides, alkylamides, and alkoxides, however these precursors have drawbacks such as possible...
In this study the atomic layer deposition (ALD) of TiO2 and ZrO2 using two heteroleptic amido‐guanidinate precursors, [Ti(NEtMe)3(guan‐NEtMe)] and [Zr(NEtMe)3(guan‐NEtMe)], together with water or ozone as oxygen sources, are investigated. All processes exhibit self‐limiting growth at a deposition temperature of 275°C. The zirconium precursor especially gives high growth rates (0.8/1.0 Å per cycle...
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