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A homogeneous KNbO3 (KN) thin film was grown on a Pt/Ti/SiO2/Si substrate using the RF sputtering method. A K2.88Nb5O15 secondary phase was formed in the KN film when the deposition and the annealing temperatures were greater than room temperature (RT) and 800 °C, respectively, owing to the evaporation of K2O. On the other hand, KNb3O8 and K3Nb5.45O15 secondary phases were formed in the KN films when...
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