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In this letter, we report the characteristics of transparent Ga-doped ZnO (GZO) electrodes contacted to the InP/InGaAs epitaxial structure both with and without a NiOx inserting layer. The GZO films deposited onto the p-InP/InGaAs structure by both radio-frequency sputtering and plasma-mode atomic layer deposition always yield Schottky contact characteristics. The barrier height improvement at the...
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