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The SiO 2 /nanocrystalline silicon (nc-Si)/SiO 2 double-barrier structure on p-type (100) silicon substrate was fabricated in situ by plasma oxidation and layer-by-layer deposition at low temperature (250 o C) in a plasma enhanced chemical vapor deposition reactor. Frequency-dependent capacitance-voltage measurements were performed to study the electrical properties and the...
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