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Les structures electroniques du sesquioxyde In 2 O 3 et de In 2 O 3 :Sn sont examinees dans le cadre de methodes ab initio auto-coherentes, basees sur la theorie de la fonctionnelle de la densite, ainsi qu'a l'aide de la methode non autocoherente de Huckel etendue. Dans le cas non dope, un gap direct et une forte dispersion en bas de bande de conduction sont obtenus...
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