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The ZrO2 films were deposited onto a Si(100) substrate using an alternate reaction of ZrCl4 and O2 under atmospheric pressure. It is found that the growth rate of ZrO2 film depends on the growth conditions, such as growth temperature, partial pressure of the sources being supplied, and exposure time of the substrate to the gaseous sources. Self-limiting growth of the ZrO2 was achieved in the range...
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