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To explain the difference between SiC-CVD on the Si-face and C-face, a heterogeneous model was improved, in which the etching, growth and doping features of SiC-CVD in a horizontal hot-wall reactor were numerically analyzed. The improved model was able to explain the etching and growth features accurately. There was no difference between the Si- and C-face. In addition, we propose the surface C/Si...
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