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N-type polycrystalline silicon (poly-Si) films with large grains exceeding 30 μm in width are successfully prepared by the solid phase crystallization (SPC) technique on glass through a control of the PH3 gas flow rate. The grains in the poly-Si films are investigated by electron backscatter diffraction (EBSD) and are found to be randomly oriented, whereby the average grain size ranges from 4.3 to...
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