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This paper presents a method to salvage malfunctioned bits in a FinFET SRAM array caused by random threshold voltage (Vt) variation. The Vt of pass gates (PGs) is gradually lowered during the read process from the initial high value until the stored data is detected by the sense amplifier. As a result, the best Vt is automatically chosen for each cell and malfunctioned bits of both those too fast...
The area penalty, operation stability, and operation speed of the 20-nm-ZG FinFET SRAM were compared to those of the 20-nm-ZG bulk-planar SRAM. The FinFET SRAM with beta-ratio of 1 is expected to realize not only 7% less area penalty, but also the same or superior operational stability to that of the bulk-planar SRAM with beta-ratio of 2 because of less variability of the device performance. Also,...
A field emitter array (FEA) is expected for operation under a server environment. We focused on hafnium nitride (HfN) for the cold cathode metal, because it possesses relative lower work function [1] and high resistance against oxidation at high temperature [2]. We have already reported fabrication of HfN-FEA and emission properties of HfN-FEA at high temperature [3], but we have not examined HfN-FEA...
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