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This paper presents a novel low voltage LDMOS structure with low on-resistance based on 0.13 μm CMOS technology. 8 V/9 V Nch LDMOS have only 0.3 μm gate length when the maximum gate operating voltage is 5 V, while the gate length of 5 V CMOS is 0.6 μm to avoid the short channel effect. The obtained specific on-resistance are 1.8 mΩmm2 (8 V Nch LDMOS) and 5.9 mΩmm2 (8 V Pch LDMOS) respectively. Furthermore...
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