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During transients, the instability of the power system can attribute to the angle instability as well as the voltage instability. The angle and voltage stability are entangled with each other under such circumstances. The angle stability has been well-studied, and many online stability assessment approaches have been put forward to this end. Yet the problem to determine the voltage stability of power...
Before mass production, designed IC will be firstly verified using a Multi Project Wafer (MPW) procedure. How to package the MPW chips in a short time with a reasonable price is the common need of design houses. The Quad Flat Package (QFP) cavity carrier provides a “house” to protect the chips, and is strongly accepted by IC design companies and research parties. But usually, the QFP cavity carrier...
The GNSS-R (Global Navigation Satellite System Reflectometry) technique has been envisaged as a promising low-cost complementary passive remote sensing tool to conventional active instruments for ocean, land and ice monitoring over the last decade. For the ocean surface wind retrieval of GNSS-R, the approach of fitting real measurements to a forward scattering model tuned with wind speed is used usually...
Swing arm of packaging equipment is one of the key parts for ensuring the packaging precision. To improve rigidity of swing arm, structural optimization of swing arm basing on HyperWorks is complemented. The model of swing arm before structural optimization is analyzed. The analysis result show that rigidity of swing arm can not satisfied the requirement for packaging equipment. Design domain is defined...
The tunability of the two photon absorption coefficient (TPAC) is studied in the HgCdTe p-n junction with the external bias voltage. The TPAC in the p-n junction region will strongly manipulated by the build-in field induced Franz- Keldysh (F-K) effect on the energy band structure. The obvious two photon absorption process is clearly observed as the nonlinear enhancement of photo-voltage on the incident...
Transport properties of freestanding InAs quantum dots on GaAs(001) are investigated by means of conductive atomic force microscopy. Resonant tunneling through the hole state of valence-band of single quantum dot is observed at room temperature. The threshold bias for resonant tunneling is related with the dot size, while the amplitude of tunneling current changes little when the height of dot varies...
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