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In article number 2002704, Henry Medina, Ming Yang, Shijie Wang, Dongzhi Chi, and co‐workers report a ReRAM cell with outstanding cumulative probabilities using a MoS2/polymer heterostructure. Moreover, the high resistance state is determined to be an excellent source of multistate randomness. Thus, a process for the production of high‐performance ReRAM devices is presented, which sheds light on their...
Resistive random‐access memories (ReRAMs) based on transition metal dichalcogenide layers are promising physical sources for random number generation (RNG). However, most ReRAM devices undergo performance degradation from cycle to cycle, which makes preserving a normal probability distribution during operation a challenging task. Here, ReRAM devices with excellent stability are reported by using a...
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