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This study investigated the atomic layer deposition (ALD) behavior of zinc oxide (ZnO) films on SiO 2 /Si substrates using Zn(C 2 H 5 ) 2 and O 3 as the precursor and oxidant, respectively, at substrate temperatures ranging from 230 to 300 °C, and the electrical properties of the thin films. The self-limiting ALD mechanism of ZnO thin film growth was confirmed...
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