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Ge nanocrystals with a radius from 25 down to 1.5 nm are formed in a SiOx matrix. A luminescence is observed around 3.1 eV with a subnanosecond photoluminescence (PL) dynamic. The strongest PL is found for films containing the largest nanocrystals. These results are a clear indication that the blue luminescence is not produced by radiative recombination of excitons confined in the Ge nanocrystals...
A technique for tailor making silicon nanocrystals on 4-inch wafers has been developed. Following a standard procedure in silicon technology, a thermally unstable silicon compound in the form of an ultra-thin layer is first deposited on a substrate. A subsequent thermal treatment leads to a phase separation in this layer, in which silicon clusters and nanocrystals form depending on the temperature;...
A technique for tailor making silicon nanocrystals on 4-inch wafers has been developed. Following a standard procedure in silicon technology, a thermally unstable silicon compound in the form of an ultra-thin layer is first deposited on a substrate. A subsequent thermal treatment leads to a phase separation in this layer, in which silicon clusters and nanocrystals form depending on the temperature;...
There has been increasing interest in intentional synthesis of nanowires and nanotubes based on a large variety of materials. A deeper understanding of their properties and a sufficient growth control are in the center of current research interest. Strategies for position-controlled and nano-patterned growth of nanowire arrays are demonstrated by selected examples of our work based on ZnO nanowires...
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