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A memory cell based on n+-Si/ZrO2/Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding 104. The memory devices show a large on/off ratio of about 106 and narrow resistance distributions before...
The self-rectifying resistive switching behavior is investigated in the Au/ZrO2: nc-Au/n+ Si sandwich structure with the Au nanocrystals embedded ZrO2 films (ZrO2: nc-Au) fabricated by e-beam evaporation. The rectification ratio is obtained to be 7??102 under ??0.5 V at low-resistance state (LRS), which can alleviate the cross talk effect in crossbar structure arrays without additional switching elements...
Strong magnetoelectric (ME) coupling can be realized in multiferroic heterostructures, which have led to a variety of devices. However, it has been challenging in achieving strong ME coupling at microwave frequencies. Here, we report on novel FeGaB/Si/PMN-PT and FeGaB/PMN-PT microwave multiferroic heterostructures, which show strong ME coupling at both DC and microwave frequencies. A high microwave...
This paper presents an uncooled microcantilever infrared (IR) detector, of which the focal plane array (FPA) is fabricated based on bulk silicon technique. Compared with conventional cantilever IR detector fabricated with surface micromachining method, the IR absorption efficiency can be improved by 48% due to the selective removal of the substrate silicon with deep reactive ion etching (DRIE) technique...
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