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We demonstrate an optically pumped GaSb-based mid-Infrared photonic crystal surface emitting laser (PCSEL) at 2.3μm with line width of 0.3nm. The PCSEL was operated with temperature up to 350K, showing a shift rate of 0.21 nm/K.
The GaN-based Photonic crystal surface emitting lasers (PCSELs) with different central defects were fabricated and investigated. The characteristics for PCSELs with different central defects were calculated and matched well with experimental results.
In this paper, we analyzed the transmission characteristics of the point-defected around the outer layers of 90-degree bend photonic crystal. The simulation results show the vertical and horizontal point-defects have much effect than slanted ones.
We successfully demonstrated and analyzed the characteristics of GaN-based photonic-crystal surface emitting lasers at room temperature at different band edges (Gamma, K, and M), showing specific thresholds and polarization angles.
Experimental investigation of A-type and B-type guided modes was performed in GaN-based film-transferred photonic crystal light-emitting diodes. Good agreement with the band structure calculated in the limit of two-dimensional free photon was obtained.
We demonstrated GaN-based two-dimensional photonic crystal surface emitting lasers with a low threshold pumping energy density of about 2.7 mJ/cm2 and a large spontaneous coupling factor of 5times10-3, and lasing actions from three different band-edges.
The azimuthal anisotropy of GaN photonic crystal light-emitting diode is investigated using an annular structure. The extracted light distribution has P/S ratio of 5.5 for light propagating in GammaX direction and 2.1 for GammaM direction.
We report fabrication of GaN-based two-dimensional surface emitting photonic-crystal lasers and successful demonstration of lasing action at room temperature with the emission wavelength at 424.3 nm and a low threshold pumping energy density of 3.5 mJ/cm2.
The fabricated GaN photonic crystal defect emitter demonstrated multimode lasing with a low optical pumping threshold of pulse energy ~0.15muJ. The device exhibited high spectral purity and enhanced spontaneous emission factor, beta~0.045.
Lasing characteristics of 12-fold quasi-periodic photonic crystal micro-cavity lasers are obtained and compared with triangular lattice photonic crystal lasers. An ultra-low threshold is observed and tolerance of fabrication imperfection in QPC lasers is investigated.
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