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The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern and roughened GaOx film grown on the exposed surface. The GaOx film was grown by photoelectrochemical (PEC) oxidation via H2O and formed a naturally rough oxide surface and GaOx/GaN interface. Compared with that of conventional broad-area LEDs, the output power of the microhole array LED and the...
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