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A novel charge-pumping (CP) technique is demonstrated to extract border-trap distribution for high- kappa gated MOSFETs. The varying-frequency CP method is shown to be more effective than the varying-amplitude one for probing border traps and extending the tunneling depth. A linear relationship of the Qcp versus ln(T rTf)1/2 plot can only be maintained at the CP frequency of 1 MHz, while not below...
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