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A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the 1T-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers...
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