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Inductively coupled plasma reactive ion etching of Ta thin films masked with photoresist was performed using C2F6/Ar, HBr/Ar and Cl2/Ar gases. The etch characteristics such as etch rate, etch selectivity and etch profile were investigated in different gas concentrations of each gas. The Cl2 chemistry showed high degree of anisotropy in etch profile as well as fastest etch rate and highest etch selectivity...
The etch characteristics of Ru thin films patterned with TiN hard masks in O2/Ar, CH4/Ar and O2/CH4/Ar gas mixtures were studied using inductively coupled plasma reactive ion etching. When the Ru films were etched in O2/Ar gas, the etch rates of the Ru films and TiN hard masks decreased but the etch selectivity of the Ru films to the hard mask increased with increasing O2 concentration. The etch profiles...
The etch characteristics of TiN hard mask patterned CoFeB thin films were investigated using an inductively coupled plasma reactive ion etching in a CH 3 COOH/Ar gas mixture. The etch characteristics of CoFeB magnetic thin film and TiN hard masks were investigated as a function of gas mixture concentration, coil rf power, dc-bias voltage and gas pressure. As CH 3 COOH concentration...
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