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Bandgap-tunable SiON (oxynitride) tunnel barrier is developed to optimize the performance and reliability of BE-SONOS NAND Flash devices. The HTO O2 layer of the ONO tunnel barrier is replaced by SiON thin films with various refractive index (n) and thickness. We found that with n ≤ 1.72, SiON can provide excellent data retention comparable to conventional BE-SONOS. On the other hand, the erase speed...
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