The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A novel self-aligned μTrench-based cell architecture for phase change memory (PCM) process is presented. The low programming current and the good dimensional control of the sub-lithographic features achieved with the μTrench structure are combined with a self-aligned patterning strategy that simplify the integration process in term of alignment tolerances and of number of critical masks. The proposed...
This paper presents a non-conventional program pulse approach for phase-change memories (PCMs). The cell programming curve is experimentally evaluated and discussed. The proposed set-sweep program pulse allows compensating for spreads in cell physical parameters. This ensures a better SET condition for marginal cells and adequately narrow SET distributions, which results in improved read margin. Experimental...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.