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In this paper, the breakdown voltage in avalanche photodiodes operating in Geiger mode is investigated. In particular, the breakdown voltage dependence on the structural characteristics of n+/p avalanche diodes, such as implant dose and epitaxial layer thickness and doping concentration, as well as the temperature behavior are analyzed. The study includes both experimental data and numerical simulations...
In this paper, the breakdown voltage (VBD) temperature behavior in Geiger-Mode avalanche photodiodes (GM-APDs) is investigated by means of both experimental characterization of silicon photomultiplier (SiPMs) fabricated at FBK-IRST and one-dimensional TCAD simulations of GM-APDs. The analysis aims at relating both the VBD and its temperature coefficient to relevant technological device parameters,...
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