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Double Patterning Lithography (DPL) is currently being used as part of Resolution Enhancement Technique (RET) in 45nm and 32nm technologies. DPL involves partitioning a layout into two masks to reduce interference from neighboring patterns and improve resolution. Triple pattern lithography has also been suggested as a way to continue scaling with trailing lithography technology. However, due to complexity...
Stringent design rules and RET (resolution enhancement technique) measures prevent occurrence of interconnect opens and shorts. However, success of this strategy depends on completeness of physical design rules. In deep sub-wavelength lithography, all physical design rules or their context sensitivity to reticle position may not be fully understood a priori. As a result defects may arise in silicon...
For process nodes 22nm and below, a multitude of new manufacturing solutions have been proposed to improve the yield of devices being manufactured. With these new solutions come an increasing number of defect mechanisms. There is a need to model and characterize these new defect mechanisms so that (i) ATPG patterns can be properly targeted, (ii) defects can be properly diagnosed and addressed at design...
Lithographic process variations, such as changes in focus, exposure, resist thickness introduce distortions to line shapes on a wafer. Large distortions may lead to line open and bridge faults and the locations of such defects vary with lithographic process corner. Based on lithographic simulation, it is easily verified that for a given layout, changing one or more of the process parameters shifts...
Lithographic variability and its impact on printability is a major concern in today's semiconductor manufacturing process. To address sub-wavelength printability, a number of resolution enhancement techniques (RET) have been used. While RET techniques allow printing of sub-wavelength features, the feature width itself becomes highly sensitive to process parameters, which in turn detracts from yield...
Photolithography is at the heart of semiconductor manufacturing process. To support continued scaling of transistors, lithographic resolution must continue to improve. At today's volume manufacturing process, a light source of 193 nm wavelength is used to print devices with 45 nm feature size. To address sub-wavelength printability, a number of resolution enhancement techniques (RET) have been used...
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