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A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 µm and 175 µm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10−3 A/W for the 3D TSV ZnO nanowire photodetector...
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