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Picosecond VECSELs achieve high average output powers of up to 2.1 W and pulse repetition rates of up to 50 GHz using semiconductor saturable absorber mirrors (SESAMs) for modelocking. The shortest pulse duration generated by a VECSEL is 260 fs, which is achieved at 15 mW average output power. We show for the first time a passively modelocked VECSEL, where the gain and the absorber are both entirely...
The authors demonstrate up to 4.35 W output power from a Stranski-Krastanow grown quantum dot semiconductor disk laser (SK-QD SDL), representing a 15 times increase in power from the previous published maximum power in the work of Germann et al. (2008), and the first multi-Watt output from any QD SDL. The experimental demonstration of a multi-Watt power level continuous wave operation of QD based...
In this work, we demonstrate for the first time that an antiresonant SESAM can modelock a VECSEL with the same spot size on gain and saturable absorber. This has been made possible thanks to a systematic study on the influence of QD-SESAMs growth parameters and post-growth annealing on the macroscopic optical SESAM properties. The modulation depth (DeltaR) of the annealed single layer antiresonant...
A detailed QD-SESAM growth study enabled the first modelocking of a VECSEL with similar spot size on gain and antiresonant SESAM. Antiresonant designs can strongly improve MIXSELs, a novel type of ultrafast integrated VECSELs.
We report the first entirely quantum-dot-based SESAM-modelocked VECSEL, using quantum-dot layers for gain and absorber. We obtain 22 mW average output power at 1053 nm wavelength in 10-ps pulses with 2.54 GHz repetition rate.
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
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