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Using laser pulses with <1ns duration and a 500MHz digital oscilloscope the current pulses were investigated for p-i-n Si diodes irradiated by neutrons up to 1MeV equivalent fluences of 2.4x10 14 n/cm 2 . Fitting the current pulse duration as a function of bias voltage allowed measurement of mobility and saturation velocity for both electrons and holes. No significant changes...
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