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This paper discusses and models the program instability observed in filamentary Hf-based RRAM devices in the context of the Hourglass model. It is demonstrated that two variability sources can be distinguished: (i) number variations of the amount of vacancies in the filament constriction and (ii) constriction shape variations. The shape variations are not stable in time and show a log(time)-dependent...
We review our recent work on modeling of low current filamentary switching in amorphous HfO2 RRAM. The conduction is controlled by the width of the constriction, determining the electron transmission. The set and reset processes are modeled as a dynamic flow between two oxygen vacancy reservoirs connected by a narrow constriction. Reset is described as a dynamic balance between an upward and downward...
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