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An effective passivation technique that yields low off-state leakage and low current collapse simultaneously in high-voltage (600-V) AlGaN/GaN high-electron-mobility transistors (HEMTs) is reported in this letter. The passivation structure consists of an AlN/ stack with 4-nm AlN deposited by plasma-enhanced atomic layer deposition and 50-nm deposited by PECVD. The AlN/...
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