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A thorough study of the switching mechanism for WOX ReRAM gives clues about how to improve its performance and reliability. Consequently, a 60 nm WOX ReRAM is achieved with excellent characteristics - 50ns fast switching, 106 cycling endurance, large MLC window, low read disturb of >; 109, and excellent 150°C/2,000Hrs data retention. Furthermore, the oxidation of the TiN barrier into an insulating...
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