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In0.53Ga0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In0.53Ga0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., Ion/Ioff ∼105, DIBL ∼51 mV/V at Vds = 0.5V for Lg=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high...
ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this work...
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