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Chip-on-film (COF) reliability with fine Cu metal on the film tape used as inner or outer leads for bonding with Au bump that forms electrical contact in display driver IC (DDI) chip is reported. In COF structure, Cu metal is fabricated by electroplating and its mechanical strength was characterized using bending test. It is found that the reliability of COF relies on the quality of Cu electroplating...
We demonstrate a novel ??remote interfacial layer (IL) scavenging?? technique yielding a record-setting equivalent oxide thickness (EOT) of 0.42 nm using a HfO2-based MOSFET high-?? gate dielectric. Intrinsic effects of IL scaling on carrier mobility are clarified using this method. We reveal that the mobility degradation observed for La-containing high-?? is not due to the La dipole but due to the...
We report for the first time that extreme EOT scaling and low n/p VTHs can be achieved simultaneously. Underlying mechanisms that enable EOT scaling and EWF tuning are explained and the fundamental device parameters including reliability of the extremely scaled devices are discussed. Record low gate leakage, appropriately low VTHs and competitive carrier mobilities in this work demonstrate the gate...
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