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We successfully demonstrated DC and RF performance of a metal-oxide-HEMT based on baseline InAs/AlSb HEMT epitaxy material. E-beam evaporated Al1-xOx was chosen for the dielectric film and its composition characterized by EDS. In a device with 2.0 mum gate length, maximum drain current is 286 mA/mm and peak transconductance is 495 mS/mm at drain voltage of 0.4 V. Microwave performance shows a fT of...
Growth, fabrication, and characterization for a type II lineup InAs/AlSb HFET are presented. An as-grown epitaxy wafer with a 300 K mobility of 21,300 cm2/V-s and an electron sheet concentration of 1.4times1012 cm-2 was processed into devices. Peak transconductance of 720 mS/mm and drain current of 650 mA/mm at drain voltage of 1.0 V are achieved in a 1-mum gate length device. It is observed strong...
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