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Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals...
Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics...
In this work, N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development are presented. Highly doped N+-InGaAs cap layers are used to decrease the parasitic resistances in contact and access regions. As-grown modulation-doped epitaxy materials exhibit a Hall mobility of 14,200 cm2/V s and a sheet density of 6.15 ×1012 cm-2, while a mobility of 14,600 cm2/V s and a sheet density of 5.61 × 1012...
Conventional InAs/AlSb HEMTs suffer high gate leakage and incomplete pinch-off issues due to instable chemical property of the AlSb and GaSb materials though their excellent performance and circuit application have already been demonstrated. Based on the concerns, we proposed a two-step passivation process for minimizing the negative effect based on developed high-quality InAs/AlSb HEMT materials...
We successfully demonstrated DC and RF performance of a metal-oxide-HEMT based on baseline InAs/AlSb HEMT epitaxy material. E-beam evaporated Al1-xOx was chosen for the dielectric film and its composition characterized by EDS. In a device with 2.0 mum gate length, maximum drain current is 286 mA/mm and peak transconductance is 495 mS/mm at drain voltage of 0.4 V. Microwave performance shows a fT of...
Growth, fabrication, and characterization for a type II lineup InAs/AlSb HFET are presented. An as-grown epitaxy wafer with a 300 K mobility of 21,300 cm2/V-s and an electron sheet concentration of 1.4times1012 cm-2 was processed into devices. Peak transconductance of 720 mS/mm and drain current of 650 mA/mm at drain voltage of 1.0 V are achieved in a 1-mum gate length device. It is observed strong...
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