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In this study a metal-insulator semiconductor field effect transistor (MISFET) was fabricated on an undoped (100)-oriented AlGaAs/GaAs heterostructure. This device has the ability to switch the charge carriers in the conduction channel between electrons and holes by switching the sign of the applied top gate voltage. The device was characterised at 0.3K and electron/hole transport measurements were...
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device exhibits Coulomb blockade oscillations and shows stable electrical characteristics with little drift and improved noise performance.
Reliability studies of InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) grown on GaAs substrates for high frequency/power applications are reported. The MHEMTs were stressed at a drain voltage of 3 V for 36 hrs, as well as undergoing a thermal storage test at 250°C for 48 hrs. Under both stress conditions, the drain current density decreased about 12.5%. The gate current, however,...
Copper metallized AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70nm) as the diffusion barrier is reported for the first time. In comparison with the Au metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of less than 0.5dB, isolation larger than 35dB and the...
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